PART |
Description |
Maker |
MN103SD0Q MN103SFD0R |
Transfer mode: Word transfer. Burst transfer. Intermittent transfer
|
Panasonic Semiconductor
|
KB354NT |
High current transfer ratio
|
Kingbright Corporation
|
LTV-352T |
High current transfer ratio, High input-output isolation voltage
|
Lite-On Technology Corporation
|
2SC3929A |
Low noise voltage NV. High forward current transfer ratio hFE.
|
TY Semiconductor Co., Ltd
|
2SC2406 |
Low noise voltage NV. High forward current transfer ratio hFE.
|
TY Semiconductor Co., Ltd
|
2SD2528 |
Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
|
Panasonic Semiconductor
|
2SD2375 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)
|
PANASONIC[Panasonic Semiconductor]
|
2SD1753 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)
|
PANASONIC[Panasonic Semiconductor]
|
MN103SK7N MN103SK7Q MN103SK7R |
Transfer method: 2-bus cycle transfer
|
Panasonic Semiconductor
|
QT113 QT113-D QT113H QT113H-D QT113H-IS QT113H-S Q |
0.5-6.5V; 20mA; charge-transfer touch sensor. For light switches, industrial panels, appliance control, security systems, access systems, pointing devices, elevator buttoms, toys & games CHARGE-TRANSFER TOUCH SENSOR 电荷转移触摸传感
|
Quantum Research Group ltd Electronic Theatre Controls, Inc. ETC[ETC] ATMEL Corporation
|